Time: 08:30, July 22, 2026
Venue: Room 209, Industry-Education Integration (IEI) Building
Overview:
This report focuses on the failure mechanisms of power semiconductor devices under operating conditions beyond the Safe Operating Area (SOA). It reveals the underlying mechanisms of localized current crowding and high current density before device breakdown. The report also highlights the limitations of conventional simulation approaches that combine one-dimensional thermal models with a single SPICE model while assuming uniform current distribution under non-SOA operating conditions. Furthermore, it introduces more sophisticated electrothermal coupling modeling methods and innovative characterization techniques, including emission microscopy, photoluminescence, and lock-in thermography.
Organizers:
Office of Science and Technology, School of Electrical Engineering
Speaker:
Giovanni Breglio received his Ph.D. degree in Electronic Engineering (EE) in 1994 and is currently a Full Professor of EE at the University of Naples Federico II (UNINA). Since 2000, he has served as the Director of the OptoPowerLab (a UNINA lab for Optoelectronics and Power Device). He teaches courses including Telecommunication Electronics and Integrated Photonics and has supervised more than ten Ph.D. students. Professor Breglio has long collaborated with organizations such as Bosch, STMicroelectronics, and CERN, leading research projects. He is the founder of two university–industry spin-off companies, Optosmart and Optoadvance, and holds 11 domestic and international patents. He served as Co-Chair of the ICSCRM 2023 and has been a member of the technical program committees of several international conferences, including IEEE SENSORS, ISPSD, and ESREF.
